The n&k EclipSE utilizes n&k’s patented optical design that combines single wavelength  ellipsometry  with polarized DUV-Vis-NIR reflectometry to determine the optical properties (n and k) and thicknesses of ultra-thin (less than a few nm) and thick films, plus multi-layer film structures.
The EclipSE also determines depths, CDs and profiles of simple and complex trenches and holes. The tool is designed to meet the stringent accuracy, repeatability and reproducibility of today’s advanced semiconductor fabrication facilities. This fully-automated system can be configured for various size wafers (300mm(12”), 200mm(8”), and 150mm(6”))

• Thin Film Measurements
 - Thickness
 - n and k (from 190 – 1000 nm)
 - Surface and Interface Roughness
 - Energy Band Gap (Eg)

• OCD Metrology for 2-D and 3 -D Structures (Trenches and Contact Holes)
 - Depths
 - CDs
 - Profiles